The R1RW0408DGE-2PI#B1 is a specific model of Ferroelectric Random Access Memory (FRAM) chip manufactured by Ramtron, which is now a part of Cypress Semiconductor. Here are some additional details about this particular model:
Memory Density: The R1RW0408DGE-2PI#B1 has a memory density of 512 KiloBytes (KB), which is equivalent to 4 MegaBits (Mb).
Memory Organization: The memory is organized into 4,096 pages, with each page consisting of 128 bytes. The chip has a total of 524,288 memory locations.
Read/Write Speed: The R1RW0408DGE-2PI#B1 has a fast read/write speed, with access times as low as 60 nanoseconds (ns) and write times as low as 100 ns.
Endurance: FRAM technology has a very high endurance, and the R1RW0408DGE-2PI#B1 is no exception. It is rated for up to 10^14 write cycles, which is significantly higher than traditional non-volatile memories such as Flash or EEPROM.
Data Retention: The chip has a data retention period of over 10 years at a temperature range of -40°C to +85°C.
Power Consumption: The R1RW0408DGE-2PI#B1 is a low-power device, with a typical operating current of 220 microamps (µA) during active read/write operations and 4 microamps (µA) during standby mode.
Package Type: The chip is packaged in an 8-pin DIP (Dual In-line Package), which is a through-hole package type that is commonly used in older or low-volume electronic systems.
Overall, the R1RW0408DGE-2PI#B1 is a reliable and high-performance FRAM chip that offers several advantages over traditional non-volatile memories, including fast read/write speeds, low power consumption, and high endurance.
The electrical characteristics of the AS4C512M16D3LA-10BIN DDR3 SDRAM module include:
Voltage: The module is designed to operate at a voltage of 1.5V, which is the standard voltage for DDR3 memory.
Frequency: The memory module operates at a maximum frequency of 100 MHz, which corresponds to a clock cycle time of 10 ns.
Data Rate: The DDR3 technology used in this module transfers data twice per clock cycle, resulting in a data transfer rate of up to 1600 MT/s (Mega Transfers per second).
Latency: The module has a CAS Latency (CL) of 10 cycles, which represents the number of clock cycles it takes to access data in the memory array.
Signal Integrity: The module has a stub-series terminated logic (SSTL) interface, which is a differential signaling technology that helps to maintain signal integrity at high frequencies and reduces power consumption.
Power Consumption: The module has a maximum power consumption of 1.35 watts (W) in active mode and 0.15 W in standby mode, which makes it an energy-efficient option for computing systems.
Overall, the AS4C512M16D3LA-10BIN DDR3 SDRAM module has standard electrical characteristics that allow it to function efficiently in various computing systems.